FIR110N10PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR110N10PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

FIR11NS65AFG11A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

FIR11N90ANG900V N-Channel MOSFET PIN Connection TO-3PFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge: Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) : 1.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Location

FIR11N40FG400V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=27nC (Typ.). BVDSS=400V,ID=11AGDS RDS(on) : 0.4 (Max) @V =10VG 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc

FIR11NS70AFG11A,700V DP MOS Power Transistor-SPIN Connection TO-220FDESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G