FIR110N10PG Specs and Replacement

Type Designator: FIR110N10PG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220AB

FIR110N10PG substitution

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FIR110N10PG datasheet

 ..1. Size:4212K  first semi
 fir110n10pg.pdf pdf_icon

FIR110N10PG

FIR110N10PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR110N10PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON) ... See More ⇒

 9.1. Size:1805K  first semi
 fir11ns65afg.pdf pdf_icon

FIR110N10PG

FIR11NS65AFG 11A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S ... See More ⇒

 9.2. Size:1821K  first semi
 fir11n90ang.pdf pdf_icon

FIR110N10PG

FIR11N90ANG 900V N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) 1.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location ... See More ⇒

 9.3. Size:2550K  first semi
 fir11n40fg.pdf pdf_icon

FIR110N10PG

FIR11N40FG 400V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=27nC (Typ.). BVDSS=400V,ID=11A G DS RDS(on) 0.4 (Max) @V =10V G 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc... See More ⇒

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Detailed specifications: FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, 50N06, FIR11N40FG, FIR11N90ANG, FIR11NS65AFG, FIR11NS70AFG, FIR120N08PG, FIR12N15LG, FIR12N70FG, FIR12N80FG

Keywords - FIR110N10PG MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.