FIR110N10PG MOSFET. Datasheet pdf. Equivalent

   Type Designator: FIR110N10PG
   Marking Code: FIR110N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 163 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-220AB

FIR110N10PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS