FIR11N90ANG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR11N90ANG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO-3P

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FIR11N90ANG datasheet

 ..1. Size:1821K  first semi
 fir11n90ang.pdf pdf_icon

FIR11N90ANG

FIR11N90ANG 900V N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) 1.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location

 8.1. Size:1805K  first semi
 fir11ns65afg.pdf pdf_icon

FIR11N90ANG

FIR11NS65AFG 11A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

 8.2. Size:2550K  first semi
 fir11n40fg.pdf pdf_icon

FIR11N90ANG

FIR11N40FG 400V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=27nC (Typ.). BVDSS=400V,ID=11A G DS RDS(on) 0.4 (Max) @V =10V G 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

 8.3. Size:2921K  first semi
 fir11ns70afg.pdf pdf_icon

FIR11N90ANG

FIR11NS70AFG 11A,700V DP MOS Power Transistor-S PIN Connection TO-220F DESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G

MOSTRAR MÁS

Otros transistores... FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG, FIR11N40FG, IRFZ44, FIR11NS65AFG, FIR11NS70AFG, FIR120N08PG, FIR12N15LG, FIR12N70FG, FIR12N80FG, FIR13N50FG, FIR14N50FG