FIR11N90ANG Todos los transistores

 

FIR11N90ANG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FIR11N90ANG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO-3P
     - Selección de transistores por parámetros

 

FIR11N90ANG Datasheet (PDF)

 ..1. Size:1821K  first semi
 fir11n90ang.pdf pdf_icon

FIR11N90ANG

FIR11N90ANG900V N-Channel MOSFET PIN Connection TO-3PFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge: Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) : 1.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Location

 8.1. Size:1805K  first semi
 fir11ns65afg.pdf pdf_icon

FIR11N90ANG

FIR11NS65AFG11A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

 8.2. Size:2550K  first semi
 fir11n40fg.pdf pdf_icon

FIR11N90ANG

FIR11N40FG400V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=27nC (Typ.). BVDSS=400V,ID=11AGDS RDS(on) : 0.4 (Max) @V =10VG 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc

 8.3. Size:2921K  first semi
 fir11ns70afg.pdf pdf_icon

FIR11N90ANG

FIR11NS70AFG11A,700V DP MOS Power Transistor-SPIN Connection TO-220FDESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP33N65M2 | RFL1N10L | STP55N06L | BUZ358 | AUIRF2804

 

 
Back to Top

 


 
.