FIR11N90ANG Datasheet and Replacement. Cross Reference Search

FIR11N90ANG Datasheet (PDF)

..1. Size:1821K first semi
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FIR11N90ANG900V N-Channel MOSFET PIN Connection TO-3PFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge: Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) : 1.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Location

8.1. Size:1805K first semi
fir11ns65afg.pdf pdf_icon

FIR11NS65AFG11A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

8.2. Size:2550K first semi
fir11n40fg.pdf pdf_icon

FIR11N40FG400V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=27nC (Typ.). BVDSS=400V,ID=11AGDS RDS(on) : 0.4 (Max) @V =10VG 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc

8.3. Size:2921K first semi
fir11ns70afg.pdf pdf_icon

FIR11NS70AFG11A,700V DP MOS Power Transistor-SPIN Connection TO-220FDESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .