FCP11N60 Todos los transistores

 

FCP11N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCP11N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FCP11N60 Datasheet (PDF)

 ..1. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdf pdf_icon

FCP11N60

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu

 ..2. Size:621K  fairchild semi
fcp11n60 fcpf11n60.pdf pdf_icon

FCP11N60

December 2008 TMSuperFETFCP11N60/FCPF11N60General Description FeaturesSuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150Cfrom Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC)utilizing advanced charge balance mechanisms. L

 0.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdf pdf_icon

FCP11N60

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi

 0.2. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdf pdf_icon

FCP11N60

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

Otros transistores... FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , K2611 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 .

History: 2SK2931 | FQPF13N50C

 

 
Back to Top

 


 
.