FCP11N60 Datasheet. Specs and Replacement
Type Designator: FCP11N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220
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FCP11N60 substitution
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FCP11N60 datasheet
fcp11n60 fcpf11n60 fcpf11n60t.pdf
March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor s first 650V @Tj = 150 C genera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective outpu... See More ⇒
fcp11n60 fcpf11n60.pdf
December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150 C from Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32 gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. L... See More ⇒
fcp11n60n fcpf11n60nt.pdf
August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299 Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi ... See More ⇒
fcp11n60f fcpf11n60f.pdf
December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance... See More ⇒
Detailed specifications: FQP32N20C, FQB6N40C, FQP33N10, FQB8N90CTM, FQP34N20, FCPF11N60, FQP3N30, FQP3N60C, 20N50, FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15
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