FCP11N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: FCP11N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO220
FCP11N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCP11N60
Datasheet (PDF)
..1. Size:1820K fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdf 
March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu
..2. Size:621K fairchild semi
fcp11n60 fcpf11n60.pdf
December 2008 TMSuperFETFCP11N60/FCPF11N60General Description FeaturesSuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150Cfrom Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC)utilizing advanced charge balance mechanisms. L
0.1. Size:2711K fairchild semi
fcp11n60n fcpf11n60nt.pdf
August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi
0.2. Size:620K fairchild semi
fcp11n60f fcpf11n60f.pdf
December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance
0.3. Size:759K onsemi
fcp11n60n fcpf11n60nt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.4. Size:594K onsemi
fcp11n60f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.5. Size:257K inchange semiconductor
fcp11n60n.pdf
isc N-Channel MOSFET Transistor FCP11N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
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