FCP11N60 datasheet, аналоги, основные параметры

Наименование производителя: FCP11N60  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm

Тип корпуса: TO220

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Аналог (замена) для FCP11N60

- подборⓘ MOSFET транзистора по параметрам

 

FCP11N60 даташит

 ..1. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdfpdf_icon

FCP11N60

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor s first 650V @Tj = 150 C genera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective outpu

 ..2. Size:621K  fairchild semi
fcp11n60 fcpf11n60.pdfpdf_icon

FCP11N60

December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150 C from Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32 gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. L

 0.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdfpdf_icon

FCP11N60

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299 Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi

 0.2. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdfpdf_icon

FCP11N60

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

Другие IGBT... FQP32N20C, FQB6N40C, FQP33N10, FQB8N90CTM, FQP34N20, FCPF11N60, FQP3N30, FQP3N60C, 20N50, FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15