DACMI250N120BZK3 Todos los transistores

 

DACMI250N120BZK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DACMI250N120BZK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1000 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 250 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 444 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013(typ) Ohm
   Paquete / Cubierta: SOT227
 

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DACMI250N120BZK3 Datasheet (PDF)

 0.1. Size:386K  dacosemi
 dacmi250n120bzk3.pdf pdf_icon

DACMI250N120BZK3

DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

 8.1. Size:400K  dacosemi
 dacmi240n120bzk.pdf pdf_icon

DACMI250N120BZK3

DACMI240N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.10 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi

 9.1. Size:457K  dacosemi
 dacmi060n120bzk.pdf pdf_icon

DACMI250N120BZK3

DACMI060N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227PreliminaryFeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 40 m@ V GS = 20 V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

 9.2. Size:385K  dacosemi
 dacmi450n120bzk3.pdf pdf_icon

DACMI250N120BZK3

DACMI450N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Typ. 5 m@ VGS = 15V Fully Avalanche Rated SDG Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Dimensions in inches and (millimeters) Electrically Isolation base plateApplications Solar Inverters Sw

MOSTRAR MÁS

Otros transistores... DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , IRFB7545 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 .

 

 
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