DACMI250N120BZK3
MOSFET. Datasheet pdf. Equivalent
Type Designator: DACMI250N120BZK3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1000
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 250
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 342
nC
trⓘ - Rise Time: 61
nS
Cossⓘ -
Output Capacitance: 444
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013(typ)
Ohm
Package:
SOT227
DACMI250N120BZK3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DACMI250N120BZK3
Datasheet (PDF)
0.1. Size:386K dacosemi
dacmi250n120bzk3.pdf 
DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters
8.1. Size:400K dacosemi
dacmi240n120bzk.pdf
DACMI240N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.10 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi
9.1. Size:457K dacosemi
dacmi060n120bzk.pdf
DACMI060N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227PreliminaryFeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 40 m@ V GS = 20 V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters
9.2. Size:385K dacosemi
dacmi450n120bzk3.pdf
DACMI450N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Typ. 5 m@ VGS = 15V Fully Avalanche Rated SDG Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Dimensions in inches and (millimeters) Electrically Isolation base plateApplications Solar Inverters Sw
9.3. Size:1581K dacosemi
dacmi150n120bzk3.pdf
DACMI150N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 14 m@ VGS = 15V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters S
9.4. Size:396K dacosemi
dacmi180n120bzk.pdf
DACMI180N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.16 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi
9.5. Size:782K dacosemi
dacmi120n120bzk.pdf
DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)
9.6. Size:383K dacosemi
dacmi060n170bzk.pdf
DACMI060N170BZKDACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET FeaturesSG SD Appl
Datasheet: WPB4002
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