DACMI250N120BZK3 MOSFET. Datasheet pdf. Equivalent
Type Designator: DACMI250N120BZK3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 250 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 342 nC
trⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 444 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013(typ) Ohm
Package: SOT227
DACMI250N120BZK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DACMI250N120BZK3 Datasheet (PDF)
dacmi250n120bzk3.pdf
DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters
dacmi240n120bzk.pdf
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dacmi060n120bzk.pdf
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dacmi450n120bzk3.pdf
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dacmi150n120bzk3.pdf
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dacmi180n120bzk.pdf
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dacmi120n120bzk.pdf
DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)
dacmi060n170bzk.pdf
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