DACMI250N120BZK3 MOSFET Datasheet: N-Ch, 1200V, 250A. Full specification with pinout and replacement list

DACMI250N120BZK3 Specs and Replacement

Type Designator: DACMI250N120BZK3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1000 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 444 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 typ Ohm

Package: SOT227

DACMI250N120BZK3 substitution

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DACMI250N120BZK3 datasheet

0.1. Size:386K dacosemi
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DACMI250N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy.13 m @ V = 15 V GS Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters ... See More ⇒

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DACMI240N120BZK Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy.10 m @ VGS = 18V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters Swi... See More ⇒

9.1. Size:457K dacosemi
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DACMI450N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Typ. 5 m @ VGS = 15V Fully Avalanche Rated S D G Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Dimensions in inches and (millimeters) Electrically Isolation base plate Applications Solar Inverters Sw... See More ⇒