FQP15P12 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQP15P12 datasheet

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QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 110 pF) This advanced technology has been especially tailored

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August 2014 FQP15P12 / FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Description Features This P-Channel enhancement mode power MOSFET is -15 A, -120 V, RDS(on) = 0.2 (Max.) @ VGS=-10 V, ID = -7.5 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 29 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 110 pF) M

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , IRF2807 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 .