All MOSFET. FQP15P12 Datasheet

 

FQP15P12 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP15P12

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 120 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 38 nC

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220

FQP15P12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP15P12 Datasheet (PDF)

1.1. fqp15p12.pdf Size:921K _fairchild_semi

FQP15P12
FQP15P12

August 2014 FQP15P12 / FQPF15P12 P-Channel QFET® MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is • -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 29 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 110 pF) M

1.2. fqp15p12 fqpf15p12.pdf Size:852K _fairchild_semi

FQP15P12
FQP15P12

QFET FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 110 pF) This advanced technology has been especially tailored to Fast sw

 

Datasheet: FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , IRFBC40 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 .

 

 
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