P0610BT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P0610BT N-Channel Enhancement Mode NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 1. GATE G100V 6.5m 120A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

P0610BTFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = 10V100V 66ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C66IDContinuous Drain CurrentTC = 100 C41AIDM200Pulsed Drain Cur

P0610BTF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 6.5m 66A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

TP0610KNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA)60 6 @ VGS = 10 V 1 to 3.0 185FEATURES BENEFITS APPLICATIONSD High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Low On-Resistance: 6 D Low Offset (Error

TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR

TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper

TP0610KVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 6 at VGS = - 10 V - 1 to - 3 - 185 High-Side Switching Low On-Resistance: 6 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.)TO-236

TP0610TP-Channel Enhancement ModeVertical DMOS FETsFeaturesGeneral Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs Low power drive requirementwell-proven silicon-gate manufacturing process. This Ease of parallelingcombination produces a device with the

TP0610K-T1www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo