P0610BT datasheet, подбор замены

 ..1. Size:190K  niko-sem
 p0610bt.pdf 

P0610BT N-Channel Enhancement Mode NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 1. GATE G 100V 6.5m 120A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 0.1. Size:769K  unikc
 p0610btf.pdf 

P0610BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5m @VGS = 10V 100V 66A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 66 ID Continuous Drain Current TC = 100 C 41 A IDM 200 Pulsed Drain Cur

 0.2. Size:228K  niko-sem
 p0610btf.pdf 

P0610BTF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 6.5m 66A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

 9.1. Size:45K  1
 tp0610k.pdf 

TP0610K New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) 60 6 @ VGS = 10 V 1 to 3.0 185 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low On-Resistance 6 D Low Offset (Error

 9.2. Size:70K  vishay
 tp0610l tp0610t vp0610l vp0610t bs250.pdf 

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATUR

 9.3. Size:89K  vishay
 bs250kl-tr1-e3 tp0610kl bs250kl.pdf 

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected 2000 V V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A) APPLICATIONS 6 @ VGS = -10 V -0.27 -60 -1 to 30 60 1 to -3.0 10 @ VGS = -4.5 V -0.21 D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Oper

 9.4. Size:207K  vishay
 tp0610k.pdf 

TP0610K Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition TrenchFET Power MOSFET - 60 6 at VGS = - 10 V - 1 to - 3 - 185 High-Side Switching Low On-Resistance 6 Low Threshold - 2 V (typ.) Fast Swtiching Speed 20 ns (typ.) TO-236

 9.5. Size:474K  supertex
 tp0610t.pdf 

TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s Low power drive requirement well-proven silicon-gate manufacturing process. This Ease of paralleling combination produces a device with the

 9.6. Size:898K  cn vbsemi
 tp0610k-t1.pdf 

TP0610K-T1 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition TrenchFET Power MOSFET - 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance 3 Low Threshold - 2 V (typ.) Fast Swtiching Speed 20 ns (typ.) Lo