P1306ED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P-Channel Enhancement Mode P1306ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 13.5m -48A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

P-Channel Logic Level Enhancement Mode P1306EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 13.5m -43A DD D D DG. GATE D. DRAIN S. SOURCE G100% UIS Tested 100% Rg Tested #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1306/DAdvance InformationMTP1306HDTMOS E-FET.High Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is75 AMPERESdesigned to withstand high energy in the avalanche and commuta-30 VOLTStion modes. This new energy efficient design al

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1306/DAdvance InformationMTP1306HDTMOS E-FET.High Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is75 AMPERESdesigned to withstand high energy in the avalanche and commuta-30 VOLTStion modes. This new energy efficient design al