P1306ED Datasheet. Specs and Replacement

Type Designator: P1306ED  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 396 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO-252

P1306ED substitution

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P1306ED datasheet

 ..1. Size:210K  niko-sem
 p1306ed.pdf pdf_icon

P1306ED

P-Channel Enhancement Mode P1306ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 13.5m -48A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =... See More ⇒

 8.1. Size:352K  niko-sem
 p1306ek.pdf pdf_icon

P1306ED

P-Channel Logic Level Enhancement Mode P1306EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 13.5m -43A D D D D D G. GATE D. DRAIN S. SOURCE G 100% UIS Tested 100% Rg Tested #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS ... See More ⇒

 9.1. Size:171K  motorola
 mtp1306rev0.pdf pdf_icon

P1306ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al... See More ⇒

 9.2. Size:176K  motorola
 mtp1306.pdf pdf_icon

P1306ED

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al... See More ⇒

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Detailed specifications: P1050ETF, P1060ETFNA, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN, 10N65, P1306EK, P1350ETF, P1406BV, P1410BD, P1410BK, P1560JD, P1560JF, P1610AK

Keywords - P1306ED MOSFET specs

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