P1306ED datasheet, подбор замены

 ..1. Size:210K  niko-sem
 p1306ed.pdf 

P-Channel Enhancement Mode P1306ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 13.5m -48A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 8.1. Size:352K  niko-sem
 p1306ek.pdf 

P-Channel Logic Level Enhancement Mode P1306EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 13.5m -43A D D D D D G. GATE D. DRAIN S. SOURCE G 100% UIS Tested 100% Rg Tested #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

 9.1. Size:171K  motorola
 mtp1306rev0.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al

 9.2. Size:176K  motorola
 mtp1306.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al