PD600BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PD600BA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: TO-252

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PD600BA Datasheet (PDF)

..1. Size:194K niko-sem
pd600ba.pdf

PD600BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 9.5m 42A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sour

9.1. Size:67K st
pd60015.pdf

PD60015PD60015SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60015 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

9.2. Size:67K st
pd60030.pdf

PD60030PD60030SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60030 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

9.3. Size:67K st
pd60004.pdf

PD60004PD60004SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60004 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD6

9.4. Size:486K infineon
ipd600n25n3g.pdf

IPD600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to

9.5. Size:242K inchange semiconductor
ipd600n25n3.pdf

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250

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