PD600BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD600BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 9.5m 42A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sour

PD60015PD60015SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60015 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

PD60030PD60030SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60030 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

PD60004PD60004SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60004 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD6

IPD600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250