PD600BA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PD600BA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 41
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
TO-252
PD600BA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PD600BA
Datasheet (PDF)
..1. Size:194K niko-sem
pd600ba.pdf 
PD600BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 9.5m 42A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sour
9.1. Size:67K st
pd60015.pdf
PD60015PD60015SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60015 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD
9.2. Size:67K st
pd60030.pdf
PD60030PD60030SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60030 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD
9.3. Size:67K st
pd60004.pdf
PD60004PD60004SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60004 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD6
9.4. Size:486K infineon
ipd600n25n3g.pdf
IPD600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to
9.5. Size:242K inchange semiconductor
ipd600n25n3.pdf
isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250
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