PD600BA Datasheet PDF and Equivalents Search

 ..1. Size:194K  niko-sem
 pd600ba.pdf

PD600BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 30V 9.5m 42A 2. DRAIN 3. SOURCE S 100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sour... See More ⇒

 9.1. Size:67K  st
 pd60015.pdf

PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60015 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD... See More ⇒

 9.2. Size:67K  st
 pd60030.pdf

PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60030 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD... See More ⇒

 9.3. Size:67K  st
 pd60004.pdf

PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RF DESCRIPTION (formed lead) The PD60004 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF power PD6... See More ⇒

 9.4. Size:486K  infineon
 ipd600n25n3g.pdf

IPD600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V N-channel, normal level RDS(on),max 60 mW Excellent gate charge x R product (FOM) DS(on) ID 25 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒

 9.5. Size:242K  inchange semiconductor
 ipd600n25n3.pdf

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3 FEATURES Static drain-source on-resistance RDS(on) 60m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250... See More ⇒