Справочник MOSFET. PD600BA

 

PD600BA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PD600BA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для PD600BA

 

 

PD600BA Datasheet (PDF)

 ..1. Size:194K  niko-sem
 pd600ba.pdf

PD600BA PD600BA

PD600BA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G30V 9.5m 42A 2. DRAIN 3. SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Sour

 9.1. Size:67K  st
 pd60015.pdf

PD600BA PD600BA

PD60015PD60015SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 15 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60015 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

 9.2. Size:67K  st
 pd60030.pdf

PD600BA PD600BA

PD60030PD60030SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60030 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD

 9.3. Size:67K  st
 pd60004.pdf

PD600BA PD600BA

PD60004PD60004SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATADesigned for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 4 W with 11 dB gain @ 2000 MHz PowerSO-10RFDESCRIPTION(formed lead)The PD60004 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Effect RF powerPD6

 9.4. Size:486K  infineon
 ipd600n25n3g.pdf

PD600BA PD600BA

IPD600N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to

 9.5. Size:242K  inchange semiconductor
 ipd600n25n3.pdf

PD600BA PD600BA

isc N-Channel MOSFET Transistor IPD600N25N3,IIPD600N25N3FEATURESStatic drain-source on-resistance:RDS(on)60mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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