FQP85N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP85N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO220

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FQP85N06 datasheet

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 fqp85n06.pdf pdf_icon

FQP85N06

May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 86 nC) planar stripe, DMOS technology. Low Crss ( typical 165 pF) This advanced technology has been especially tailored to

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FQP85N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, FCA20N60, FQP7P06, IRF3205, FQP8N80C, FCPF11N60T, FQP8N90C, FQP8P10, FQP9N30, FQP9N90C, FQP9P25, FQPF10N20C