FQP85N06 Todos los transistores

 

FQP85N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP85N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FQP85N06 Datasheet (PDF)

 ..1. Size:647K  fairchild semi
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FQP85N06

May 2001TMQFETFQP85N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 86 nC)planar stripe, DMOS technology. Low Crss ( typical 165 pF)This advanced technology has been especially tailored to

 ..2. Size:788K  onsemi
 fqp85n06.pdf pdf_icon

FQP85N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRF3205 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .

History: ZVP4424A | 2N7002MTF | DH10H037R | DH116N08F

 

 
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