All MOSFET. FQP85N06 Datasheet

 

FQP85N06 Datasheet and Replacement


   Type Designator: FQP85N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 86 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
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FQP85N06 Datasheet (PDF)

 ..1. Size:647K  fairchild semi
 fqp85n06.pdf pdf_icon

FQP85N06

May 2001TMQFETFQP85N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 86 nC)planar stripe, DMOS technology. Low Crss ( typical 165 pF)This advanced technology has been especially tailored to

 ..2. Size:788K  onsemi
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FQP85N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRF3205 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .

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