All MOSFET. FQP85N06 Datasheet

 

FQP85N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP85N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 85 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 86 nC

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO220

FQP85N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP85N06 Datasheet (PDF)

1.1. fqp85n06.pdf Size:647K _fairchild_semi

FQP85N06 FQP85N06

May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 86 nC) planar stripe, DMOS technology. Low Crss ( typical 165 pF) This advanced technology has been especially tailored to Fast swit

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