FQP85N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP85N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220
FQP85N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP85N06 Datasheet (PDF)
1.1. fqp85n06.pdf 
Size:647K _fairchild_semi
May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, RDS(on) = 0.010? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 86 nC) planar stripe, DMOS technology. • Low Crss ( typical 165 pF) This advanced technology has been especially tailored to • Fast swit
Datasheet: FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRFZ44N , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .
