FQP85N06 Specs and Replacement
Type Designator: FQP85N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220
FQP85N06 substitution
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FQP85N06 datasheet
fqp85n06.pdf
May 2001 TM QFET FQP85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 86 nC) planar stripe, DMOS technology. Low Crss ( typical 165 pF) This advanced technology has been especially tailored to... See More ⇒
fqp85n06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , IRF3205 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C .
Keywords - FQP85N06 MOSFET specs
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FQP85N06 replacement
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