SJMN600R60D Todos los transistores

 

SJMN600R60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN600R60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 294 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-252
 

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SJMN600R60D Datasheet (PDF)

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SJMN600R60D

SJMN600R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R60D SJMN600R60

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 sjmn600r60f.pdf pdf_icon

SJMN600R60D

SJMN600R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R60F N600R60 T

 5.1. Size:732K  auk
 sjmn600r65cd.pdf pdf_icon

SJMN600R60D

SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on)D Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6

 5.2. Size:586K  auk
 sjmn600r65b.pdf pdf_icon

SJMN600R60D

SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S

MOSTRAR MÁS

Otros transistores... SJMN380R65MF , SJMN380R65ZD , SJMN380R65ZF , SJMN380R70B , SJMN380R70D , SJMN380R70F , SJMN380R80ZB , SJMN380R80ZFD , IRF840 , SJMN600R60F , SJMN600R65B , SJMN600R65CD , SJMN600R65CF , SJMN600R65D , SJMN600R65F , SJMN600R70D , SJMN600R70I .

History: AP02N60H-H-HF | AONS74306 | IRF9328 | TPM5121NEC6 | 2SK3018UB | SL2318

 

 
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