All MOSFET. SJMN600R60D Datasheet

 

SJMN600R60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SJMN600R60D
   Marking Code: SJMN600R60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-252

 SJMN600R60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SJMN600R60D Datasheet (PDF)

 ..1. Size:538K  auk
 sjmn600r60d.pdf

SJMN600R60D SJMN600R60D

SJMN600R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R60D SJMN600R60

 4.1. Size:778K  auk
 sjmn600r60f.pdf

SJMN600R60D SJMN600R60D

SJMN600R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R60F N600R60 T

 5.1. Size:732K  auk
 sjmn600r65cd.pdf

SJMN600R60D SJMN600R60D

SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on)D Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6

 5.2. Size:586K  auk
 sjmn600r65b.pdf

SJMN600R60D SJMN600R60D

SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S

 5.3. Size:779K  auk
 sjmn600r65f.pdf

SJMN600R60D SJMN600R60D

SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R65F N600R65 T

 5.4. Size:473K  auk
 sjmn600r65d.pdf

SJMN600R60D SJMN600R60D

SJMN600R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R65D SJMN600R65

 5.5. Size:773K  auk
 sjmn600r65cf.pdf

SJMN600R60D SJMN600R60D

SJMN600R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN6

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HTJ300N02 | 2SK3480 | BSP373N

 

 
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