AOCR35101E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOCR35101E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10000 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00115 Ohm
Paquete / Cubierta: CSP3.2X1.95-10L
Búsqueda de reemplazo de AOCR35101E MOSFET
AOCR35101E Datasheet (PDF)
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Otros transistores... SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AON6380 , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 .
History: WMM190N03TS | 2SK430S | IRC830PBF | WMK26N60F2 | ME04N25-G | UT3N06G-AE3 | SI3403
History: WMM190N03TS | 2SK430S | IRC830PBF | WMK26N60F2 | ME04N25-G | UT3N06G-AE3 | SI3403



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