AOCR35101E Specs and Replacement

Type Designator: AOCR35101E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm

Package: CSP3.2X1.95-10L

AOCR35101E substitution

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AOCR35101E datasheet

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AOCR35101E

AOCR35101E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCR35101E

AOCR33105E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 9.2. Size:670K  aosemi
 aocr32326.pdf pdf_icon

AOCR35101E

AOCR32326 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:670K  aosemi
 aocr36330.pdf pdf_icon

AOCR35101E

AOCR36330 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: SUN50A20CI, SUN82A20CI, SUN830D, SUN830DN, SUN830F, SUN830I, QM1830M3, AOCR33105E, IRFZ24N, AOCR36330, AOCR32326, AOCA32112E, AOCA32116E, AOCA24108E, AOCA32106E, AOCA72114, AOCA32301

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