AOCR35101E Datasheet and Replacement
Type Designator: AOCR35101E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00115 Ohm
Package: CSP3.2X1.95-10L
AOCR35101E substitution
AOCR35101E Datasheet (PDF)
aocr35101e.pdf

AOCR35101E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aocr33105e.pdf

AOCR33105E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aocr32326.pdf

AOCR3232630V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
aocr36330.pdf

AOCR3633030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=10V)
Datasheet: SUN50A20CI , SUN82A20CI , SUN830D , SUN830DN , SUN830F , SUN830I , QM1830M3 , AOCR33105E , 8N60 , AOCR36330 , AOCR32326 , AOCA32112E , AOCA32116E , AOCA24108E , AOCA32106E , AOCA72114 , AOCA32301 .
History: BUK6209-30C | PSMN013-100YSE | 4N70KL-TN3-R | TK3A60DA | L2N7002SDW1T3G | 2N80G-TF2-T | 2N80L-TN3-R
Keywords - AOCR35101E MOSFET datasheet
AOCR35101E cross reference
AOCR35101E equivalent finder
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History: BUK6209-30C | PSMN013-100YSE | 4N70KL-TN3-R | TK3A60DA | L2N7002SDW1T3G | 2N80G-TF2-T | 2N80L-TN3-R



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