AOCA36102E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOCA36102E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 22 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3800 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: DFN3.40X1.96-10L
Búsqueda de reemplazo de AOCA36102E MOSFET
AOCA36102E Datasheet (PDF)
aoca36102e.pdf

AOCA36102E22V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 22V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
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AOCA36116C24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32317.pdf

AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
Otros transistores... AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , 10N60 , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 .
History: NTLJS2103PTBG | DM616 | 2N6568 | KP504E | STL6NM60N | AP60T03AS | MDIS1502TH
History: NTLJS2103PTBG | DM616 | 2N6568 | KP504E | STL6NM60N | AP60T03AS | MDIS1502TH



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