AOCA36102E Datasheet and Replacement
Type Designator: AOCA36102E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 22 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3800 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: DFN3.40X1.96-10L
AOCA36102E substitution
AOCA36102E Datasheet (PDF)
aoca36102e.pdf

AOCA36102E22V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 22V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoca36116c.pdf

AOCA36116C24V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 24V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32317.pdf

AOCA3231730V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 30V Low RSS(ON) ESD protection RSS(ON) (at VGS=10V)
Datasheet: AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , 10N60 , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 .
History: SM3331PSQG | 2SJ608 | MTP3N35 | DAMH300N150 | NTLLD4901NF | QM2506W | HGD029NE4SL
Keywords - AOCA36102E MOSFET datasheet
AOCA36102E cross reference
AOCA36102E equivalent finder
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AOCA36102E substitution
AOCA36102E replacement
History: SM3331PSQG | 2SJ608 | MTP3N35 | DAMH300N150 | NTLLD4901NF | QM2506W | HGD029NE4SL



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