AOC3878 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOC3878
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4300 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: DFN3.55X1.77A-10L
AOC3878 Datasheet (PDF)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BL30N65-F | 15N50 | MTN7000ZHA3 | SM1A63NHUC | IPD15N06S2L-64 | 2SK2379 | AOT13N50
History: BL30N65-F | 15N50 | MTN7000ZHA3 | SM1A63NHUC | IPD15N06S2L-64 | 2SK2379 | AOT13N50



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