AOC3878 Datasheet and Replacement
Type Designator: AOC3878
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4300 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: DFN3.55X1.77A-10L
AOC3878 substitution
AOC3878 Datasheet (PDF)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , IRF3710 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 , AONR21117 .
History: NTTFS4C08N
Keywords - AOC3878 MOSFET datasheet
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History: NTTFS4C08N



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