AOC3878 Specs and Replacement

Type Designator: AOC3878

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: DFN3.55X1.77A-10L

AOC3878 substitution

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AOC3878 datasheet

 ..1. Size:906K  aosemi
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AOC3878

AOC3878 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 8.1. Size:799K  aosemi
aoc3870a.pdf pdf_icon

AOC3878

AOC3870A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

 8.2. Size:793K  aosemi
aoc3870c.pdf pdf_icon

AOC3878

AOC3870C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 8.3. Size:432K  aosemi
aoc3870.pdf pdf_icon

AOC3878

AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

Detailed specifications: AONE38132, AONP36332, AONP36336, AONP36320, AONP38324, AONP36332U, AONP38324U, AOCA36102E, AO3400, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.