AONS30306
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AONS30306
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 302
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5
nS
Cossⓘ - Capacitancia
de salida: 2110
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0011
Ohm
Paquete / Cubierta:
DFN5X6-8L
Búsqueda de reemplazo de AONS30306
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AONS30306
Datasheet (PDF)
..1. Size:414K aosemi
aons30306.pdf 
AONS3030630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V)
6.1. Size:405K aosemi
aons30300.pdf
AONS3030030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V)
6.2. Size:468K aosemi
aons30302.pdf
AONS3030230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:405K aosemi
aons34304c.pdf
AONS34304C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:769K aosemi
aons38108.pdf
AONS3810825V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V)
9.3. Size:384K aosemi
aons32314.pdf
AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)
9.4. Size:573K aosemi
aons36348.pdf
AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:693K aosemi
aons32302.pdf
AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:634K aosemi
aons32310.pdf
AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:574K aosemi
aons36346.pdf
AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:387K aosemi
aons32306.pdf
AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)
9.9. Size:414K aosemi
aons36314.pdf
AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:408K aosemi
aons36308.pdf
AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:633K aosemi
aons32100.pdf
AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:416K aosemi
aons36303.pdf
AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.13. Size:406K aosemi
aons36302.pdf
AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:406K aosemi
aons36304.pdf
AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:436K aosemi
aons34308c.pdf
AONS34308C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:398K aosemi
aons36337.pdf
AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)
9.17. Size:420K aosemi
aons32106.pdf
AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
9.18. Size:576K aosemi
aons36312.pdf
AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:403K aosemi
aons32303.pdf
AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)
9.20. Size:754K aosemi
aons32304.pdf
AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)
9.21. Size:419K aosemi
aons36333.pdf
AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)
9.22. Size:596K aosemi
aons36316.pdf
AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.23. Size:409K aosemi
aons36306.pdf
AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)
9.24. Size:406K aosemi
aons38203.pdf
AONS3820325V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 311A Low Gate Charge RDS(ON) (at VGS=10V)
9.25. Size:402K aosemi
aons36335.pdf
AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)
9.26. Size:424K aosemi
aons36321.pdf
AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)
Otros transistores... AONS1R1A70
, AONS1R6A70
, AONS20485
, AONS21113
, AONS21309C
, AONS21321
, AONS30300
, AONS30302
, IRLB4132
, AONS32100
, AONS32106
, AONS32302
, AONS32303
, AONS32304
, AONS32310
, AONS34304C
, AONS34308C
.
History: BLM06N03-D
| IRF241
| BLP02N06-D
| ZVN4525G
| MCP87022
