AONS30306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AONS30306
   Código: 30306
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 302 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.7 V
   Qgⓘ - Carga de la puerta: 77 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 2110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
   Paquete / Cubierta: DFN5X6-8L

Búsqueda de reemplazo de MOSFET AONS30306

AONS30306 Datasheet (PDF)

..1. Size:414K aosemi
aons30306.pdf

AONS3030630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V)

6.1. Size:405K aosemi
aons30300.pdf

AONS3030030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V)

6.2. Size:468K aosemi
aons30302.pdf

AONS3030230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:405K aosemi
aons34304c.pdf

AONS34304C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:769K aosemi
aons38108.pdf

AONS3810825V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V)

9.3. Size:384K aosemi
aons32314.pdf

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)

9.4. Size:573K aosemi
aons36348.pdf

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

9.5. Size:693K aosemi
aons32302.pdf

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

9.6. Size:634K aosemi
aons32310.pdf

AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

9.7. Size:574K aosemi
aons36346.pdf

AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)

9.8. Size:387K aosemi
aons32306.pdf

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)

9.9. Size:414K aosemi
aons36314.pdf

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.10. Size:408K aosemi
aons36308.pdf

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)

9.11. Size:633K aosemi
aons32100.pdf

AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

9.12. Size:416K aosemi
aons36303.pdf

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

9.13. Size:406K aosemi
aons36302.pdf

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)

9.14. Size:406K aosemi
aons36304.pdf

AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.15. Size:436K aosemi
aons34308c.pdf

AONS34308C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

9.16. Size:398K aosemi
aons36337.pdf

AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)

9.17. Size:420K aosemi
aons32106.pdf

AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

9.18. Size:576K aosemi
aons36312.pdf

AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.19. Size:403K aosemi
aons32303.pdf

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

9.20. Size:754K aosemi
aons32304.pdf

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

9.21. Size:419K aosemi
aons36333.pdf

AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)

9.22. Size:596K aosemi
aons36316.pdf

AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

9.23. Size:409K aosemi
aons36306.pdf

AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)

9.24. Size:406K aosemi
aons38203.pdf

AONS3820325V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 311A Low Gate Charge RDS(ON) (at VGS=10V)

9.25. Size:402K aosemi
aons36335.pdf

AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)

9.26. Size:424K aosemi
aons36321.pdf

AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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