All MOSFET. AONS30306 Datasheet

 

AONS30306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS30306
   Marking Code: 30306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.7 V
   |Id|ⓘ - Maximum Drain Current: 302 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 77 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 2110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: DFN5X6-8L

 AONS30306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS30306 Datasheet (PDF)

 ..1. Size:414K  aosemi
aons30306.pdf

AONS30306
AONS30306

AONS3030630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V)

 6.1. Size:405K  aosemi
aons30300.pdf

AONS30306
AONS30306

AONS3030030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V)

 6.2. Size:468K  aosemi
aons30302.pdf

AONS30306
AONS30306

AONS3030230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:405K  aosemi
aons34304c.pdf

AONS30306
AONS30306

AONS34304C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:769K  aosemi
aons38108.pdf

AONS30306
AONS30306

AONS3810825V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V)

 9.3. Size:384K  aosemi
aons32314.pdf

AONS30306
AONS30306

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)

 9.4. Size:573K  aosemi
aons36348.pdf

AONS30306
AONS30306

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:693K  aosemi
aons32302.pdf

AONS30306
AONS30306

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:634K  aosemi
aons32310.pdf

AONS30306
AONS30306

AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:574K  aosemi
aons36346.pdf

AONS30306
AONS30306

AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:387K  aosemi
aons32306.pdf

AONS30306
AONS30306

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)

 9.9. Size:414K  aosemi
aons36314.pdf

AONS30306
AONS30306

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:408K  aosemi
aons36308.pdf

AONS30306
AONS30306

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)

 9.11. Size:633K  aosemi
aons32100.pdf

AONS30306
AONS30306

AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

 9.12. Size:416K  aosemi
aons36303.pdf

AONS30306
AONS30306

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 9.13. Size:406K  aosemi
aons36302.pdf

AONS30306
AONS30306

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)

 9.14. Size:406K  aosemi
aons36304.pdf

AONS30306
AONS30306

AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.15. Size:436K  aosemi
aons34308c.pdf

AONS30306
AONS30306

AONS34308C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 9.16. Size:398K  aosemi
aons36337.pdf

AONS30306
AONS30306

AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)

 9.17. Size:420K  aosemi
aons32106.pdf

AONS30306
AONS30306

AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 9.18. Size:576K  aosemi
aons36312.pdf

AONS30306
AONS30306

AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.19. Size:403K  aosemi
aons32303.pdf

AONS30306
AONS30306

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

 9.20. Size:754K  aosemi
aons32304.pdf

AONS30306
AONS30306

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

 9.21. Size:419K  aosemi
aons36333.pdf

AONS30306
AONS30306

AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)

 9.22. Size:596K  aosemi
aons36316.pdf

AONS30306
AONS30306

AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 9.23. Size:409K  aosemi
aons36306.pdf

AONS30306
AONS30306

AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)

 9.24. Size:406K  aosemi
aons38203.pdf

AONS30306
AONS30306

AONS3820325V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 311A Low Gate Charge RDS(ON) (at VGS=10V)

 9.25. Size:402K  aosemi
aons36335.pdf

AONS30306
AONS30306

AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)

 9.26. Size:424K  aosemi
aons36321.pdf

AONS30306
AONS30306

AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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