AONS30306 Specs and Replacement

Type Designator: AONS30306

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 302 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 2110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm

Package: DFN5X6-8L

AONS30306 substitution

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AONS30306 datasheet

 ..1. Size:414K  aosemi
aons30306.pdf pdf_icon

AONS30306

AONS30306 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:405K  aosemi
aons30300.pdf pdf_icon

AONS30306

AONS30300 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:468K  aosemi
aons30302.pdf pdf_icon

AONS30306

AONS30302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:405K  aosemi
aons34304c.pdf pdf_icon

AONS30306

AONS34304C 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS1R1A70, AONS1R6A70, AONS20485, AONS21113, AONS21309C, AONS21321, AONS30300, AONS30302, CS150N03A8, AONS32100, AONS32106, AONS32302, AONS32303, AONS32304, AONS32310, AONS34304C, AONS34308C

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.