AONS66415 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AONS66415

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 131 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 515 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm

Encapsulados: DFN5X6-8L

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AONS66415 datasheet

 ..1. Size:415K  aosemi
 aons66415.pdf pdf_icon

AONS66415

AONS66415 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:362K  aosemi
 aons66402t.pdf pdf_icon

AONS66415

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 7.2. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66415

AONS66407 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.3. Size:414K  aosemi
 aons66408.pdf pdf_icon

AONS66415

AONS66408 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS65625, AONS660A60, AONS660A70F, AONS66402T, AONS66405, AONS66405T, AONS66407, AONS66408, EMB04N03H, AONS66520, AONS66521, AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612