AONS66415 Specs and Replacement

Type Designator: AONS66415

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 515 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: DFN5X6-8L

AONS66415 substitution

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AONS66415 datasheet

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AONS66415

AONS66415 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aons66402t.pdf pdf_icon

AONS66415

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66415

AONS66407 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.3. Size:414K  aosemi
 aons66408.pdf pdf_icon

AONS66415

AONS66408 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS65625, AONS660A60, AONS660A70F, AONS66402T, AONS66405, AONS66405T, AONS66407, AONS66408, EMB04N03H, AONS66520, AONS66521, AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612

Keywords - AONS66415 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.