AONS66607 Todos los transistores

 

AONS66607 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AONS66607
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: DFN5X6-8L
 
   - Selección ⓘ de transistores por parámetros

 

AONS66607 Datasheet (PDF)

 ..1. Size:436K  aosemi
 aons66607.pdf pdf_icon

AONS66607

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:412K  aosemi
 aons66609.pdf pdf_icon

AONS66607

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:440K  aosemi
 aons66605.pdf pdf_icon

AONS66607

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.3. Size:416K  aosemi
 aons66609t.pdf pdf_icon

AONS66607

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS66405T , AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AO4468 , AONS66609 , AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T .

History: HGK025N06S | AP6900GH-HF

 

 
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