AONS66607 Datasheet and Replacement
Type Designator: AONS66607
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN5X6-8L
AONS66607 substitution
AONS66607 Datasheet (PDF)
aons66607.pdf

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons66609.pdf

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66605.pdf

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons66609t.pdf

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS66405T , AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AO4468 , AONS66609 , AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T .
History: STW29NK50Z | 2SK3489 | JCS4N65FB | CS2N60U | PSMN1R3-30YL | AOT3N100 | BUK652R6-40C
Keywords - AONS66607 MOSFET datasheet
AONS66607 cross reference
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History: STW29NK50Z | 2SK3489 | JCS4N65FB | CS2N60U | PSMN1R3-30YL | AOT3N100 | BUK652R6-40C



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