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AONS66641T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AONS66641T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 325 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 325 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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AONS66641T Datasheet (PDF)

 ..1. Size:419K  aosemi
aons66641t.pdf pdf_icon

AONS66641T

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:407K  aosemi
aons66641.pdf pdf_icon

AONS66641T

AONS66641TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:412K  aosemi
aons66609.pdf pdf_icon

AONS66641T

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:377K  aosemi
aons66612.pdf pdf_icon

AONS66641T

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

Otros transistores... AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , AONS66617 , AONS66620 , AONS66641 , IRFP460 , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T , AONS66917 , AONS66917T .

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