All MOSFET. AONS66641T Datasheet

 

AONS66641T Datasheet and Replacement


   Type Designator: AONS66641T
   Marking Code: 66641T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 325 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 325 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

AONS66641T Datasheet (PDF)

 ..1. Size:419K  aosemi
aons66641t.pdf pdf_icon

AONS66641T

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:407K  aosemi
aons66641.pdf pdf_icon

AONS66641T

AONS66641TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:412K  aosemi
aons66609.pdf pdf_icon

AONS66641T

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:377K  aosemi
aons66612.pdf pdf_icon

AONS66641T

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - AONS66641T MOSFET datasheet

 AONS66641T cross reference
 AONS66641T equivalent finder
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