AONS66641T - Даташиты. Аналоги. Основные параметры
Наименование производителя: AONS66641T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 325
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 325
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 21
ns
Cossⓘ - Выходная емкость: 1500
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0014
Ohm
Тип корпуса:
DFN5X6-8L
Аналог (замена) для AONS66641T
-
подбор ⓘ MOSFET транзистора по параметрам
AONS66641T Datasheet (PDF)
..1. Size:419K aosemi
aons66641t.pdf 

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
5.1. Size:407K aosemi
aons66641.pdf 

AONS66641TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.1. Size:412K aosemi
aons66609.pdf 

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.2. Size:377K aosemi
aons66612.pdf 

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)
7.3. Size:411K aosemi
aons66620.pdf 

AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
7.4. Size:436K aosemi
aons66607.pdf 

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
7.5. Size:440K aosemi
aons66605.pdf 

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
7.6. Size:410K aosemi
aons66615.pdf 

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.7. Size:447K aosemi
aons66617.pdf 

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)
7.8. Size:445K aosemi
aons66613.pdf 

AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)
7.9. Size:715K aosemi
aons66612t.pdf 

AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.10. Size:416K aosemi
aons66609t.pdf 

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.11. Size:720K aosemi
aons66614.pdf 

AONS6661460V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
7.12. Size:428K aosemi
aons66615t.pdf 

AONS66615TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Другие MOSFET... AONS66612T
, AONS66613
, AONS66614
, AONS66615
, AONS66615T
, AONS66617
, AONS66620
, AONS66641
, IRFP460
, AONS66811
, AONS66814
, AONS66817
, AONS66908
, AONS66909
, AONS66916T
, AONS66917
, AONS66917T
.
History: SPS04N60C3