AOSD26313C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOSD26313C
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AOSD26313C MOSFET
AOSD26313C Datasheet (PDF)
aosd26313c.pdf
AOSD26313C30V Complementary MOSFETGeneral Description Product SummaryP-Channel N-Channel Latest Advanced Trench TechnologyVDS= -30V VDS= 30V Low RDS(ON)ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current CapabilityRDS(ON) RDS(ON) RoHS and Halogen-Free Compliant
aosd21313c.pdf
AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)
aosd21307.pdf
AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)
aosd21311c.pdf
AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)
Otros transistores... AOSN32128 , AOSN32338C , AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , AOSD21311C , AOSD21313C , 2SK3568 , AOSD32334C , AOSD32338C , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 .
History: IPA50R190CE | AOSD32334C
History: IPA50R190CE | AOSD32334C
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