All MOSFET. AOSD26313C Datasheet

 

AOSD26313C Datasheet and Replacement


   Type Designator: AOSD26313C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8
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AOSD26313C Datasheet (PDF)

 ..1. Size:687K  aosemi
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AOSD26313C

AOSD26313C30V Complementary MOSFETGeneral Description Product SummaryP-Channel N-Channel Latest Advanced Trench TechnologyVDS= -30V VDS= 30V Low RDS(ON)ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current CapabilityRDS(ON) RDS(ON) RoHS and Halogen-Free Compliant

 9.1. Size:367K  aosemi
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AOSD26313C

AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:315K  aosemi
 aosd21307.pdf pdf_icon

AOSD26313C

AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:383K  aosemi
 aosd21311c.pdf pdf_icon

AOSD26313C

AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: P2003EV | STD4NK60Z | KNB2710A | STD50N03L-1 | IPF075N03L | WNM12N65 | 2SK1412LS

Keywords - AOSD26313C MOSFET datasheet

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