AOSD26313C Specs and Replacement

Type Designator: AOSD26313C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SO8

AOSD26313C substitution

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AOSD26313C datasheet

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AOSD26313C

AOSD26313C 30V Complementary MOSFET General Description Product Summary P-Channel N-Channel Latest Advanced Trench Technology VDS= -30V VDS= 30V Low RDS(ON) ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current Capability RDS(ON) RDS(ON) RoHS and Halogen-Free Compliant ... See More ⇒

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AOSD26313C

AOSD21313C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 9.2. Size:315K  aosemi
 aosd21307.pdf pdf_icon

AOSD26313C

AOSD21307 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 9.3. Size:383K  aosemi
 aosd21311c.pdf pdf_icon

AOSD26313C

AOSD21311C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: AOSN32128, AOSN32338C, AOSX21319C, AOSX32128, AO4264C, AOSD21307, AOSD21311C, AOSD21313C, 2SK3568, AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E, AOSP66919

Keywords - AOSD26313C MOSFET specs

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