AO3160E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3160E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.04 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 1.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm

Encapsulados: SOT23A

 Búsqueda de reemplazo de AO3160E MOSFET

- Selecciónⓘ de transistores por parámetros

 

AO3160E datasheet

 ..1. Size:550K  aosemi
 ao3160e.pdf pdf_icon

AO3160E

AO3160E 600V,0.04A N-Channel MOSFET General Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

 8.1. Size:251K  aosemi
 ao3160.pdf pdf_icon

AO3160E

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04A applications. RDS(ON) (at VGS=10V)

 9.1. Size:256K  aosemi
 ao3162.pdf pdf_icon

AO3160E

AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034A applications. RDS(ON) (at VGS=10V)

Otros transistores... AOSS21115C, AOSS21311C, AOSS21319C, AOSS21329, AOSS32128, AOSS32136C, AOSS32334C, AOSS32338C, 7N60, AOT080A60L, AOT095A60FDL, AOT095A60L, AOT125A60L, AOT160A60L, AOT190A60CL, AOT190A60L, AOT280A60L