All MOSFET. AO3160E Datasheet

 

AO3160E Datasheet and Replacement


   Type Designator: AO3160E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.04 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: SOT23A
 

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AO3160E Datasheet (PDF)

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AO3160E

AO3160E600V,0.04A N-Channel MOSFETGeneral Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

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AO3160E

AO3160600V,0.04A N-Channel MOSFETGeneral Description Product SummaryThe AO3160 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04Aapplications. RDS(ON) (at VGS=10V)

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AO3160E

AO3162600V,0.034A N-Channel MOSFETGeneral Description Product SummaryThe AO3162 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels VDS 700V@150of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034Aapplications. RDS(ON) (at VGS=10V)

Datasheet: AOSS21115C , AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , AOSS32136C , AOSS32334C , AOSS32338C , MMIS60R580P , AOT080A60L , AOT095A60FDL , AOT095A60L , AOT125A60L , AOT160A60L , AOT190A60CL , AOT190A60L , AOT280A60L .

History: TDM3426B | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

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