AO3160E Specs and Replacement

Type Designator: AO3160E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.04 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm

Package: SOT23A

AO3160E substitution

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AO3160E datasheet

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AO3160E

AO3160E 600V,0.04A N-Channel MOSFET General Description Product Summary Logic Level Driving 4.5V VDS @ Tj,max 700V ESD Protection ID (at VGS=10V) 0.04A RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒

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AO3160E

AO3160 600V,0.04A N-Channel MOSFET General Description Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.04A applications. RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:256K  aosemi
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AO3160E

AO3162 600V,0.034A N-Channel MOSFET General Description Product Summary The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels VDS 700V@150 of performance and robustness in popular AC-DC ID (at VGS=10V) 0.034A applications. RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOSS21115C, AOSS21311C, AOSS21319C, AOSS21329, AOSS32128, AOSS32136C, AOSS32334C, AOSS32338C, 7N60, AOT080A60L, AOT095A60FDL, AOT095A60L, AOT125A60L, AOT160A60L, AOT190A60CL, AOT190A60L, AOT280A60L

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