AOB66811L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB66811L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7 nS
Cossⓘ - Capacitancia de salida: 1580 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AOB66811L MOSFET
- Selecciónⓘ de transistores por parámetros
AOB66811L datasheet
..1. Size:369K aosemi
aob66811l.pdf 
AOB66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 140A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
9.1. Size:380K aosemi
aob66518l.pdf 
AOB66518L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)
9.2. Size:769K aosemi
aob66916l.pdf 
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
9.3. Size:842K aosemi
aob66920l.pdf 
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.4. Size:409K aosemi
aot66914l aob66914l.pdf 
AOT66914L/AOB66914L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Extremely Low RDS(ON) Optimized switching performance RDS(ON) (at VGS=10V)
9.5. Size:383K aosemi
aob66935l.pdf 
AOB66935L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 180A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
9.6. Size:379K aosemi
aob66918l.pdf 
AOB66918L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 120A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
9.7. Size:840K aosemi
aot66920l aob66920l.pdf 
AOT66920L/AOB66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.8. Size:1258K aosemi
aot66616l aob66616l.pdf 
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.9. Size:395K aosemi
aob66613l.pdf 
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.10. Size:769K aosemi
aot66916l aob66916l.pdf 
AOT66916L/AOB66916L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
9.11. Size:390K aosemi
aob66620l.pdf 
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.12. Size:374K aosemi
aob66216l.pdf 
AOB66216L TM 120V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 120V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 120A Area (SOA) RDS(ON) (at VGS=10V)
9.13. Size:390K aosemi
aot66620l aob66620l.pdf 
AOT66620L/AOB66620L TM 60V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.14. Size:395K aosemi
aot66613l aob66613l.pdf 
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.15. Size:367K aosemi
aob66919l.pdf 
AOB66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:788K aosemi
aob66616l.pdf 
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Otros transistores... AOB600A60L, AOB600A70FL, AOB600A70L, AOB66216L, AOB66518L, AOB66613L, AOB66616L, AOB66620L, IRFB4227, AOB66916L, AOB66919L, AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD