Справочник MOSFET. AOB66811L

 

AOB66811L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOB66811L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 1580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: TO263

 Аналог (замена) для AOB66811L

 

 

AOB66811L Datasheet (PDF)

 ..1. Size:369K  aosemi
 aob66811l.pdf

AOB66811L AOB66811L

AOB66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 140A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

 9.1. Size:380K  aosemi
 aob66518l.pdf

AOB66811L AOB66811L

AOB66518L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)

 9.2. Size:769K  aosemi
 aob66916l.pdf

AOB66811L AOB66811L

AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)

 9.3. Size:842K  aosemi
 aob66920l.pdf

AOB66811L AOB66811L

AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.4. Size:383K  aosemi
 aob66935l.pdf

AOB66811L AOB66811L

AOB66935LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 180A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)

 9.5. Size:395K  aosemi
 aob66613l.pdf

AOB66811L AOB66811L

AOT66613L/AOB66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.6. Size:390K  aosemi
 aob66620l.pdf

AOB66811L AOB66811L

AOT66620L/AOB66620LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 57A Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 9.7. Size:374K  aosemi
 aob66216l.pdf

AOB66811L AOB66811L

AOB66216LTM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 120V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 120A Area (SOA) RDS(ON) (at VGS=10V)

 9.8. Size:367K  aosemi
 aob66919l.pdf

AOB66811L AOB66811L

AOB66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.9. Size:788K  aosemi
 aob66616l.pdf

AOB66811L AOB66811L

AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top