AOB66811L Datasheet and Replacement
Type Designator: AOB66811L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO263
AOB66811L substitution
AOB66811L Datasheet (PDF)
aob66811l.pdf

AOB66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 140A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
aob66518l.pdf

AOB66518L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 120A (SOA) RDS(ON) (at VGS=10V)
aob66916l.pdf

AOT66916L/AOB66916LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Best in class on-resistance RDS(ON) Lowers switching loss by lower Qrr than other MOSFET RDS(ON) (at VGS=10V)
aob66920l.pdf

AOT66920L/AOB66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AOB600A60L , AOB600A70FL , AOB600A70L , AOB66216L , AOB66518L , AOB66613L , AOB66616L , AOB66620L , AON6414A , AOB66916L , AOB66919L , AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , AOTL130A60FD .
History: CEU3120 | 4N70KL-TF2-T | AP9974AGP-HF | ELM14805AA | AP60T03GP | 2SK3455 | CS6849
Keywords - AOB66811L MOSFET datasheet
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History: CEU3120 | 4N70KL-TF2-T | AP9974AGP-HF | ELM14805AA | AP60T03GP | 2SK3455 | CS6849



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