FXN0406H
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0406H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 150
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 55
nC
trⓘ - Tiempo de subida: 75
nS
Cossⓘ - Capacitancia
de salida: 450
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043
Ohm
Paquete / Cubierta:
TO263
Búsqueda de reemplazo de MOSFET FXN0406H
FXN0406H
Datasheet (PDF)
..1. Size:406K cn fx-semi
fxn0406h.pdf 
FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicons MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)
7.1. Size:274K cn fx-semi
fxn0406c.pdf
FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)
8.1. Size:289K cn fx-semi
fxn0404c.pdf
FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
8.2. Size:918K cn fx-semi
fxn0405c.pdf
FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
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