FXN0406H. Аналоги и основные параметры

Наименование производителя: FXN0406H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 75 ns

Cossⓘ - Выходная емкость: 450 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm

Тип корпуса: TO263

Аналог (замена) для FXN0406H

- подборⓘ MOSFET транзистора по параметрам

 

FXN0406H даташит

 ..1. Size:406K  cn fx-semi
 fxn0406h.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

 7.1. Size:274K  cn fx-semi
 fxn0406c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)

 8.1. Size:289K  cn fx-semi
 fxn0404c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:918K  cn fx-semi
 fxn0405c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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