FXN0406H PDF and Equivalents Search

 

FXN0406H PDF Specs and Replacement


   Type Designator: FXN0406H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO263
 

 FXN0406H substitution

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FXN0406H PDF Specs

 ..1. Size:406K  cn fx-semi
fxn0406h.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON) ... See More ⇒

 7.1. Size:274K  cn fx-semi
fxn0406c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON) ... See More ⇒

 8.1. Size:289K  cn fx-semi
fxn0404c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.2. Size:918K  cn fx-semi
fxn0405c.pdf pdf_icon

FXN0406H

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

Detailed specifications: AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , 10N65 , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C .

Keywords - FXN0406H MOSFET specs

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