FXN0504D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0504D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 58 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 280 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de FXN0504D MOSFET
FXN0504D Datasheet (PDF)
fxn0504d.pdf
FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0503d.pdf
FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0507c.pdf
FuXin Semiconductor Co., Ltd.FXN0507C Series Rev.AGeneral Description FeaturesThe FXN0507C uses advanced Silicon s MOSFET Technology, whichVDS = 70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
Otros transistores... AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , RFP50N06 , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D .
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