FXN0504D - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN0504D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: TO252
Аналог (замена) для FXN0504D
FXN0504D Datasheet (PDF)
fxn0504d.pdf
FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0503d.pdf
FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0507c.pdf
FuXin Semiconductor Co., Ltd.FXN0507C Series Rev.AGeneral Description FeaturesThe FXN0507C uses advanced Silicon s MOSFET Technology, whichVDS = 70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
Другие MOSFET... AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , RFP50N06 , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D .
History: FXN0406H | AOW66613
Список транзисторов
Обновления
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